IndiumV3, Main, Repository, bibRecord, 001251

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

Identifieur interne : 001251 ( Main/Repository ); précédent : 001250; suivant : 001252

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

Auteurs : RBID : Pascal:12-0168710

Descripteurs français

Pascal (Inist)
- Epitaxie, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Réseau(arrangement), Couche mince, Méthode MOCVD, Mécanisme croissance, Rugosité, Graphène, Synthèse nanomatériau, Hétéroépitaxie, Nanostructure, Couche épitaxique, InAs, Substrat graphène, 8107V, 8107B, 8105U, 8116.

English descriptors

KwdEn :
- Arrays, Epitaxial layers, Epitaxy, Graphene, Growth mechanism, Heteroepitaxy, III-V compound, III-V semiconductors, Indium arsenides, MOCVD, Nanomaterial synthesis, Nanostructured materials, Nanostructures, Nanowires, Roughness, Thin films.

Abstract

Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal-organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.

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Pascal:12-0168710

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene</title>
<author><name>YOUNG JOON HONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University</s1>
<s2>Sapporo 060-8628</s2>
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<sZ>1 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Sapporo 060-8628</wicri:noRegion>
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</author>
<author><name>WI HYOUNG LEE</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin</s1>
<s2>Austin, Texas 78712</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<placeName><settlement type="city">Austin (Texas)</settlement>
<region type="state">Texas</region>
</placeName>
<orgName type="university">Université du Texas à Austin</orgName>
</affiliation>
</author>
<author><name>YAPING WU</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin</s1>
<s2>Austin, Texas 78712</s2>
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<author><name sortKey="Ruoff, Rodney S" uniqKey="Ruoff R">Rodney S. Ruoff</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin</s1>
<s2>Austin, Texas 78712</s2>
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<author><name sortKey="Fukui, Takashi" uniqKey="Fukui T">Takashi Fukui</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University</s1>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Epitaxial layers</term>
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<term>Graphene</term>
<term>Growth mechanism</term>
<term>Heteroepitaxy</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
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<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
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<term>Nanowires</term>
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<term>Thin films</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Réseau(arrangement)</term>
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<term>Nanostructure</term>
<term>Couche épitaxique</term>
<term>InAs</term>
<term>Substrat graphène</term>
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<term>8105U</term>
<term>8116</term>
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<front><div type="abstract" xml:lang="en">Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal-organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.</div>
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<fA11 i1="01" i2="1"><s1>YOUNG JOON HONG</s1>
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<fA11 i1="02" i2="1"><s1>WI HYOUNG LEE</s1>
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<fA11 i1="05" i2="1"><s1>FUKUI (Takashi)</s1>
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<fA14 i1="01"><s1>Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University</s1>
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<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Semiconductor nanowire arrays integrated vertically on graphene films offer significant advantages for many sophisticated device applications. We report on van der Waals (VDW) epitaxy of InAs nanowires vertically aligned on graphene substrates using metal-organic chemical vapor deposition. The strong correlation between the growth direction of InAs nanowires and surface roughness of graphene substrates was investigated using various graphene films with different numbers of stacked layers. Notably, vertically well-aligned InAs nanowire arrays were obtained easily on single-layer graphene substrates with sufficiently strong VDW attraction. This study presents a considerable advance toward the VDW heteroepitaxy of inorganic nanostructures on chemical vapor-deposited large-area graphenes. More importantly, this work demonstrates the thinnest epitaxial substrate material that yields vertical nanowire arrays by the VDW epitaxy method.</s0>
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van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri